Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

Abstract TiO x -based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies attempted to increase the structural density The fabrication multi-level device is feasible method increasing cell. Herein, we attempt obtain that highly transparent by embedding SiO 2 nanoparticles (NPs) into matrix (TiO @SiO NPs). fully fabricated with an ITO/TiO NPs/ITO structure on glass substrate, and it shows transmittance over 95% in visible range. NPs outstanding characteristics, such high on/off ratio, long retention time, good endurance, distinguishable switching. To understand characteristics adjusting set voltages, analyze mechanism each state. This represents approach high-performance applications.